An Innovated 80V-100V High-Side Side-Isolated N-LDMOS Device
نویسندگان
چکیده
منابع مشابه
A p+/p-buffer/n-epi cmos compatible high-side RESURF LDMOS transistor for Power IC applications
Realising a higher voltage application utilising bridge topologies in CMOS Power IC CMOS technology presents integration and design issues that must be solved by careful selection of the manufacturing process architecture. In this paper, we present a solution that uses a p+/p-buffer/n-epi stack to implement a 100V RESURF N-channel LDMOS high-side compatible power transistor. The device was deve...
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ژورنال
عنوان ژورنال: MATEC Web of Conferences
سال: 2018
ISSN: 2261-236X
DOI: 10.1051/matecconf/201820102003